RF GaN Engineer (Contract)

Location:

(3000) Belgium

Salary:

market rate

Type:

Contract

Start Date:

asap

Contract Period:

6 months

Main Industry:

Search Electronics Jobs

Advertiser:

microTECH Global Ltd

Job ID:

133195326

Posted On:

16 July 2026

RF GaN Engineer (Contract)

Location: Taiwan
Duration: 12-month contract
Start: ASAP (or mutually agreed)
Work Type: On-site / Hybrid (depending on project requirements)

We are seeking an experienced RF GaN (Gallium Nitride) Engineer to support a high-performance RF power electronics programme in Taiwan. The role focuses on the design, development, testing, and optimisation of GaN-based RF power amplifier systems used in advanced communication, defence, aerospace, or industrial applications.

This is a hands-on engineering role working closely with multidisciplinary teams across RF design, semiconductor device engineering, system integration, and validation.

Key Responsibilities

RF GaN Design & Development

-Design and develop RF power amplifiers using GaN HEMT technology
-Work on high-efficiency, high-frequency RF circuits (e.g. L, S, C, X, or Ku band depending on application)
-Perform device modelling, simulation, and optimisation of GaN-based RF systems
-Develop matching networks, biasing circuits, and thermal management solutions
Testing & Validation

-Conduct RF performance testing including:

-Load-pull analysis
-Power efficiency (PAE) optimisation
-Linearity (IMD, ACPR)
-Support prototype bring-up and lab-based validation activities
-Debug RF performance issues at device, circuit, and system level
System Integration

-Integrate GaN RF amplifiers into larger RF front-end systems
-Collaborate with system engineers on impedance matching and RF chain optimisation
-Support thermal, mechanical, and packaging considerations for high-power RF systems
Cross-Functional Collaboration

-Work closely with semiconductor fabrication teams and foundries
-Interface with product, systems, and manufacturing engineering teams
-Support design reviews, technical documentation, and knowledge transfer

Required Skills & Experience

-Strong experience in RF power amplifier design using GaN technology
-Solid understanding of RF/microwave engineering principles
-Experience with high-frequency design (e.g. GHz range systems)
-Proficiency in RF simulation tools (e.g. ADS, AWR Microwave Office, HFSS or equivalent)
-Hands-on lab experience with RF test equipment (VNA, spectrum analyzers, load-pull systems)
-Understanding of thermal effects and reliability in high-power RF systems
-Experience in semiconductor device physics (GaN, SiC preferred)
-Strong debugging and analytical sk

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