Optimization of a High Reliability GaN Bidirectional Active Front End for V2G/V2H Applications

Job title:

Optimization of a High Reliability GaN Bidirectional Active Front End for V2G/V2H Applications

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Job description

Offer DescriptionW&W is currently seeking a doctoral candidate to join their team, with a focus on developing a bidirectional charger that utilizes GaN (Gallium Nitride) semiconductors for vehicle-to-grid (V2G) and vehicle-to-home (V2H) applications.This research opportunity involves exploring the potential of GaN technology to create efficient and versatile chargers that can facilitate the seamless exchange of energy between electric vehicles and the power grid or home systems. The successful candidate will have the opportunity to contribute to the advancement of sustainable energy solutions and play a crucial role in shaping the future of electric vehicle integration with the grid and home environments.

• Scientific Context

As the adoption of electric vehicles (EVs) continues to rise, the integration of EVs with the power grid opens up exciting opportunities for energy management and grid stability. By leveraging V2G and V2H technologies, we can achieve a bidirectional power flow between EVs, the grid, and residential homes, unlocking numerous benefits such as peak shaving, load balancing, and emergency backup power.However, in order for V2G to be widely adopted, it is essential to establish a connection between single-phase domestic grids operating at 230V with a current range of 16-24A.By utilizing off-board V2G chargers, numerous advantages can be achieved, including cost savings, enhanced vehicle efficiency, scalability, grid services, and simplified maintenance. This approach presents an appealing option for integrating EVs with the power grid, allowing for the maximization of benefits for both consumers and the electricity grid.The proposed topology for the bidirectional AC/DC converter is a bridgeless PFC (Power Factor Correction) in a totem pole configuration. To achieve efficient operation 650V e-mode GaN (Gallium Nitride) are used. These switches possess low output capacitance and zero reverse recovery.The switching frequency for the system is yet to be determined and can fall within the range of 200kHz to 500kHz.In this Ph.D. opportunity, the focus lies in developing a generic “switching cell” with all the key components for a half-bridge including GaN power Mosfets, gate drivers, current sensor and decoupling capacitors. This “switching cell” will be key in determining the electrical over-stress of component which affects their reliability.One challenge in the design involves the drive circuit. The layout and placement of the driver present challenges that need to be addressed in the design.The aim of this PhD thesis is to focus on the optimization of gate drivers in three distinct steps. The first step involves the implementation of an isolated gate driver powered by two isolated power supplies. This approach ensures the isolation of the gate driver from the rest of the system, enhancing safety and reducing potential interference.In the second step, the focus shifts towards an isolated gate driver powered by a standard bootstrap configuration. This alternative method offers a more simplified and cost-effective solution compared to the isolated two power supplies approach. By utilizing a bootstrap configuration, the gate driver can still function effectively while maintaining isolation.The third and final step of the thesis involves the implementation of a synchronous bootstrap instead of a bootstrap diode for the high-side GaN switch to reduce as much as possible the parasitic capacitance and to allow high switching frequencies. This step also enhances the efficiency and performance of the gate driver.By exploring these three steps, this PhD thesis aims to contribute to the field of gate driver optimization, providing valuable insights and advancements in the design and implementation of gate drivers for high switching frequency chargers applications.A significant aspect of this research project also involves collaboration with an ongoing European project involving automotive manufacturers (refer to ).One key objective of this project is to achieve a remarkable operational lifespan of 120,000 hours or 15 years for the GaN bidirectional active front end. This longevity is crucial for ensuring the long-term viability and widespread adoption of V2G/V2H applications.The successful candidate will have the opportunity to collaborate with experts in the ongoing European project. This collaboration not only enhances the research outcomes but also aligns with industry demands for long-lasting and reliable power electronic solutions.By combining academic research with industry collaboration, the PhD candidate will play a pivotal role in driving the adoption of durable and reliable power electronic solutions in the V2G/V2H sector.Funding category: Contrat doctoralPHD Country: FranceRequirementsSpecific Requirements· A Master’s degree (BAC+5) in Electrical Engineering, Power Electronics, or a related field.· Strong background in power electronics, including experience with designing and modeling power converters.· Proficiency in simulation tools such as MATLAB/Simulink, LTspice or similar software.· Knowledge of control systems and experience in developing control algorithms.· Ability to work independently and collaboratively in a multidisciplinary research team· Good communication and technical writing skills.· Can meet up to deadlines· Languages English (Business fluent) and French (intermediate level)· Experience level: less than 2 yearsAdditional InformationWork Location(s)Number of offers available 1 Company/Institute WattAndWell Country France City MASSY GeofieldWhere to apply WebsiteSTATUS: EXPIRED

Expected salary

Location

France

Job date

Wed, 13 Mar 2024 00:29:27 GMT

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